the vrf3933 is a gold-metallized silicon n-channel rf power transistor de- signed for broadband commercial and military applic ations requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. features ? improved ruggedness v (br)dss = 250v ? 350w with 28db typ. gain @ 30mhz, 100v ? excellent stability & low imd ? common source coniguration ? available in matched pairs ? 70:1 load vswr capability at speciied operating conditions? nitride passivated ? refractory gold metallization ? improved replacement for sd3933 ? thermally enhanced package ? rohs compliant symbol parameter vrf3933 unit v dss drain-source voltage 250 v i d continuous drain current @ t c = 25c 20 a v gs gate-source voltage 40 v p d total device dissipation @ t c = 25c 648 w t stg storage temperature range -65 to 150 c t j operating junction temperature max 200 rf power vertical mosfet maximum ratings all ratings: t c =25 c unless otherwise speciied static electrical characteristics symbol parameter min typ max unit v (br)dss drain-source breakdown voltage (v gs = 0v, i d = 100ma) 250 260 v v ds(on) on state drain voltage (i d(on) = 10a, v gs = 10v) 2.7 4.0 i dss zero gate voltage drain current (v ds = 200v, v gs = 0v) 2.0 ma i gss gate-source leakage current (v ds = 20v, v ds = 0v) 2.0 a g fs forward transconductance (v ds = 10v, i d = 10a) 8 12 mhos v gs(th) gate threshold voltage (v ds = 10v, i d = 100ma) 2.9 3.6 4.4 v microsemi website - http://www.microsemi.com 050-4969 rev c 12-2013 thermal characteristics symbol characteristic min typ max unit r jc junction to case thermal resistance 0.27 c/w caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. vrf3933 vrf3933(mp) 100v, 300w, 150mhz d s s g m177 downloaded from: http:///
vrf3933(mp) dynamic characteristics symbol parameter test conditions min typ max unit c iss input capacitance v gs = 0v 850 pf c oss output capacitance v ds = 50v 300 c rss reverse transfer capacitance f = 1mhz 30 functional characteristics symbol parameter min typ max unit g ps f 1 = 30mhz, v dd = 100v, i dq = 250ma, p out = 350w 23 28 db d f 1 = 30mhz, v dd = 100v, i dq = 250ma, p out = 350w 60 % f = 30mhz, v dd =50v, i dq = 250ma, p out = 350w cw 70:1 vswr - all phase angles, 0.2msec x 20% duty factor no degradation in output power microsemi reserves the right to change, without notice, the speciications and information contained herein. 050-4969 rev c 12-2013 0 5 10 15 20 25 30 35 40 0 1 2 3 4 5 6 7 8 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 35 1 10 100 120 1 10 100 800 10 100 1,000 10,000 0 50 100 150 200 250 c iss v ds(on ) , drain-to-source voltage (v) figure 1, output characteristics i d , drain current (a) i d , drain current (a) t j = 125c v ds , drain-to-source voltage (v) figure 3, capacitance vs drain-to-source voltage c, capacitance (pf) v ds , drain-to-source voltage (v) figure 4, forward safe operating area i d , drain current (a) 5v 5.5v 4.5v 3.5v 6v 17v 7v v gs , gate-to-source voltage (v) figure 2, transfer characteristics 250s pulse test<0.5 % duty cycle t j = -55c t j = 25c c oss c rss r ds(on) pd max t j = 125c t c = 75c typical performance curves i dmax 4v bvdss line 10v 100 ms 10 ms 1 ms .1 ms downloaded from: http:///
050-4969 rev c 12-2013 0 0.05 0.10 0.15 0.20 0.25 0.30 10 -5 10 -4 10 -3 10 -2 10 1.0 10 -1 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note : t 1 = pulse duration z jc , thermal impedance (c/w) rectangular pulse duration (seconds) figure 5. maximum effective transient thermal impedance junction-to-case vs pulse duration 44 47 50 53 56 59 18 21 24 27 30 33 18 20 22 24 26 28 30 32 34 18 21 24 27 30 33 10 25 40 55 70 85 44 47 50 53 56 59 pout (dbrn) p in , (dbm) figure 6. p out and gain vs p in p in , (dbm) figure 7. eff and p out vs. p in po w outeff freq=30mhz freq=30mhz figure 5b, transient thermal impedance model table 1 - typical class ab large signal input - output impedance z in - gate shunted with 25 i dq = 250ma z ol - conjugate of optimum load for 300 watts output at v dd =50v freq. (mhz) z in z out 2 21 - j 8.5 14.1 - j 0.6 13.5 4.5 - j 6.5 12.9 - j 4 27.1 2.9 - j 3.1 9.7 - j 6.6 40.7 2.5 - j 2 7.6 - j 7 65 2.4 - j 2.07 4.5 - j 6.6 0.3 d = 0.9 0.7 single pulse 0.5 0.1 0.05 pout gain gain (db) eficiency (%) vrf3933(mp) 0.0202 0.0507 0.1199 0.00647f 0.02043f 0.2421f 7.962f t j (c) 0.0792 t c (c) gain (db) downloaded from: http:///
vrf3933(mp) 050-4969 rev c 12-2013 30 mhz test circuit l1 output c3 c11 c12 c10 c6 c7 c8 c9 c1 1200pf atc100b ceramic c2, c3 0.1uf 50v 1206 smt c9-c11 .047uf npo 150v 1218 smt c6 100 pf metal clad mica c7 arco 462 mica trimmer c8 15 pf atc 100e ceramic c4, c12 10uf 100v electrolytic l1 23 nh - 2t #18 0.2"d .2"l l2 62 nh - 3t #12 0.31"dial3 2t #16 on 2x 267300081 .5" bead 5 5 n
: 5
: t1 9:1 transforner 3t #24 teflon on 5 ) 3 d u w v & r 7 w u d q v i r u p h u f r u h t2 4:1 transformer 2t 3-ply #16 teflon on rf parts co. t1 transformer core 30 mhz test circuit vbias r1 r2 l2 rf input c2 t1 c1 r3 l3 t2 + 100v c4 + vrf3933 downloaded from: http:///
050-4969 rev c 12-2013 vrf3933(mp) pin 1 - drain pin 2 - gate pin 3 - source pin 4 - source pin 5 - source m177 (0.63 dia. soe) mechanical data all dimensions are .005 dim min typ max a 0.225 0.230 0.235 b 0.265 0.270 0.275 c 0.860 0.865 0.870 d 1.130 1.135 1.140 e 0.545 0.550 0.555 f 0.003 0.005 0.007 g 0.098 0.103 0.108 h 0.150 0.160 0.170 i 0.280 j 1.080 1.100 1.120 k 0.625 0.630 0.635 f e g h i a b c d ok j .125d nom .135 r seating plane 1 4 2 3 5 adding mp at the end of p/n speciies a matched pair where v gs(th) is matched between the two parts. v th values are marked on the devices per the following table. code vth range code 2 vth range a 2.900 - 2.975 m 3.650 - 3.725 b 2.975 - 3.050 n 3.725 - 3.800 c 3.050 - 3.125 p 3.800 - 3.875 d 3.125 - 3.200 r 3.875 - 3.950 e 3.200 - 3.275 s 3.950 - 4.025 f 3.275 - 3.350 t 4.025 - 4.100 g 3.350 - 3.425 w 4.100 - 4.175 h 3.425 - 3.500 x 4.175 - 4.250 j 3.500 - 3.575 y 4.250 - 4.325 k 3.575 - 3.650 z 4.325 - 4.400 v th values are based on microsemi measurements at datasheet conditions with an accuracy of 1.0%. hazardous material warning: the ceramic portion of the device below the lead plane is beryllium oxide. beryllium oxide dust is highly toxic when inhaled. care must be taken during handling and mounting to avoid damage to this area. these devices must never be thrown away with general industrial or domestic waste. beo substrate weight: 0.703g. percentage of total module weight which is beo: 9%. downloaded from: http:///
vrf3933(mp) 050-4969 rev c 12-2013 the information contained in the document (unless it is publicly available on the web without access restrictions) is proprietary and confi- dential information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the terms of such agreement will also apply . this document and the information contained herein m ay not be modiied, by any person other than authorized personnel of microsemi. no license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in writing signed by an oficer of microsemi.microsemi reserves the right to change the coniguration, functionality and performance of its produc ts at anytime without any notice. this prod - uct has been subject to limited testing and should not be used in conjunction with life-support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to itness for a particular purpose, merchantabil ity, or infringement of any patent, copyright or other intellectual property right. any performance speciications believed to be reliable but are not veriied and customer or user must conduct and complete all performance and other testing of this product as well as any user or customers inal application. user or customer shall not rely on any data and performance speciications or parameters provided by microsemi. it is the customers and users responsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the user. microsemi speciically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost proit. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp downloaded from: http:///
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